5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm
February 2010 - Rev 17-Feb-10
Features
26 dB Small Signal Gain 39 dBm Thir...
5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm
February 2010 - Rev 17-Feb-10
Features
26 dB Small Signal Gain 39 dBm Third Order Intercept Point (OIP3) Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing
P1035-QH
General Description
The XP1035-QH is a packaged linear power amplifier that operates over the 5.9-9.5 GHz frequency band.The device provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package.The packaged amplifier is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass
capacitors to ease the implementation and volume assembly of the packaged part.The device is manufactured in GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance.The XP1035-QH is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings1
Supply
Voltage (Vd1,2,3) +7.2V
Supply Current (Id1,2,3)
600 mA
Gate Bias
Voltage (Vg1,2,3) -3V
Max Power Dissipation (Pdiss) 4.2W
RF Input Power
+15 dBm
Operating Temperature (Ta) -55 to +85 ºC
Storage Temperature (Tstg) -65 to +165 ºC
Channel Temperature (Tch)2 150 ºC
MSL Level (MSL)
MSL3
(1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly af...