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XP151A11B0MR-G Datasheet

Part Number XP151A11B0MR-G
Manufacturers Torex Semiconductor
Logo Torex Semiconductor
Description Power MOSFET
Datasheet XP151A11B0MR-G DatasheetXP151A11B0MR-G Datasheet (PDF)

XP151A11B0MR-G Power MOSFET ETR1117_003 ■GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion .

  XP151A11B0MR-G   XP151A11B0MR-G






Power MOSFET

XP151A11B0MR-G Power MOSFET ETR1117_003 ■GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V : Rds(on) = 0.17Ω@ Vgs = 4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PIN CONFIGURATION/ MARKING 11 1 x G:Gate S:Source D:Drain * x represents production lot number. ■EQUIVALENT CIRCUIT ■PRODUCT NAMES PRODUCTS PACKAGE ORDER UNIT XP151A11B0MR SOT-23 3,000/Reel XP151A11B0MR-G(*) SOT-23 3,000/Reel (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss Gate - Source Voltage Vgss Drain Current (DC) Id Drain Current (Pulse) Idp Reverse Drain Current Idr Channel Power Dissipation * Pd Channel Temperature Tch Storage Temperature Tstg 30 ±20 1 4 1 0.5 150 -55~150 V V A A A W ℃ ℃ * When impl.


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