XP151A11B0MR-G
Power MOSFET
ETR1117_003
■GENERAL DESCRIPTION
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion .
Power MOSFET
XP151A11B0MR-G
Power MOSFET
ETR1117_003
■GENERAL DESCRIPTION
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems
■FEATURES
Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V
: Rds(on) = 0.17Ω@ Vgs = 4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/ MARKING
11 1 x
G:Gate S:Source D:Drain
* x represents production lot number.
■EQUIVALENT CIRCUIT
■PRODUCT NAMES
PRODUCTS
PACKAGE
ORDER UNIT
XP151A11B0MR
SOT-23
3,000/Reel
XP151A11B0MR-G(*)
SOT-23
3,000/Reel
(*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage Vdss
Gate - Source Voltage Vgss
Drain Current (DC)
Id
Drain Current (Pulse)
Idp
Reverse Drain Current
Idr
Channel Power Dissipation * Pd
Channel Temperature
Tch
Storage Temperature
Tstg
30 ±20
1 4 1 0.5 150 -55~150
V V A A A W ℃ ℃
* When impl.