Composite Transistors
XP2211
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.1...
Composite Transistors
XP2211
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For switching/digital circuits
0.65
s Features
q q
Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.0±0.1
1 2 3
5
0.65
4
0.9± 0.1
q
UN1211 × 2 elements
0.7±0.1
s Basic Part Number of Element
0.2
s Absolute Maximum Ratings
Parameter Collector to base
voltage Rating Collector to emitter
voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C
1 : Emitter (Tr1) 2 : Base 3 : Emitter (Tr2)
Marking Symbol: 9O Internal Connection
1 2 3 4 Tr1 5
0 to 0.1
0.2±0.1
4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin)
Tr2
s Electrical Characteristics
Parameter Collector to base
voltage Collector to emitter
voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation
voltage Output
voltage high level Output
voltage low level Transition frequency Input resistance Resistance ratio
*1
(Ta=25˚C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 ...