XP231P0201TR-G

XP231P0201TR-G P-channel MOSFET -30V, -0.2A ■FEATURES On-State Resistance Driving voltage : RDS(on)＝5Ω@VGS =-4.5V : -2.5V Environmentally Friendly : EU RoHS Compliant, Pb Free ■APPLICATIONS ●Switching ETR11038-001 ■EQUIVALENT CIRCUIT ■PIN CONFIGURATION ●SOT-23(TO-236) Drain Gate Source ■PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP231P0201TR-G * SOT-23(TO-236) 3,000pcs/ Reel * The “-G” suffix denotes Halogen and Antimony free as well as beingfully EU RoHS compliant ■ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current(Pulse) (*1) Channel Power Dissipation (*2) Junction Temperature Storage Temperature (*1)PW≦10μs,duty cycle≦1% (*2)When implemented on a PCB defined by JESD51-7 VDSS VGSS ID IDP Pd TJ Tstg RATINGS -30 ±8 -0.2 -0.4 0.4 150 -55~150 Ta=25℃ UNITS V V A A W ℃ ℃ 1/6 XP231P0201TR-G ■ELECTRICAL CHARACTERISTICS PARAMETER Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage SYMBOL TEST CONDITIONS MIN. V(BR)DSS ID= -250μA, VGS=0V -30 IDSS VDS= -30V, VGS= 0V - IGSS VGS= ±8V, VDS= 0V - VGS(off) ID= -250uA, VDS= VGS -0.5 VGS= -4.5V, ID= -100mA - RDS(on) VGS= -2.5V, ID= -100mA Ciss - Coss VDS= -10V, VGS= 0V - f=1MHz Crss - td(on) - t...