XP231P0201TR-G
P-channel MOSFET -30V, -0.2A
■FEATURES
On-State Resistance Driving voltage
: RDS(on)=5Ω@VGS =-4.5V : -...
XP231P0201TR-G
P-channel
MOSFET -30V, -0.2A
■FEATURES
On-State Resistance Driving
voltage
: RDS(on)=5Ω@VGS =-4.5V : -2.5V
Environmentally Friendly : EU RoHS Compliant, Pb Free
■APPLICATIONS
●Switching
ETR11038-001
■EQUIVALENT CIRCUIT
■PIN CONFIGURATION
●SOT-23(TO-236)
Drain
Gate
Source
■PRODUCT NAME
PRODUCT NAME
PACKAGE
ORDER UNIT
XP231P0201TR-G *
SOT-23(TO-236)
3,000pcs/ Reel
* The “-G” suffix denotes Halogen and Antimony free as well as beingfully EU RoHS compliant
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage Drain Current (DC) Drain Current(Pulse) (*1) Channel Power Dissipation (*2) Junction Temperature Storage Temperature (*1)PW≦10μs,duty cycle≦1% (*2)When implemented on a PCB defined by JESD51-7
VDSS VGSS
ID IDP Pd TJ Tstg
RATINGS
-30 ±8 -0.2 -0.4 0.4 150 -55~150
Ta=25℃ UNITS
V V A A W ℃ ℃
1/6
XP231P0201TR-G
■ELECTRICAL CHARACTERISTICS
PARAMETER
Drain-Source Breakdown
Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold
Voltage
Drain-Source On Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Diode Forward
Voltage
SYMBOL TEST CONDITIONS MIN.
V(BR)DSS ID= -250μA, VGS=0V
-30
IDSS
VDS= -30V, VGS= 0V
-
IGSS
VGS= ±8V, VDS= 0V
-
VGS(off) ID= -250uA, VDS= VGS
-0.5
VGS= -4.5V, ID= -100mA
-
RDS(on)
VGS= -2.5V, ID= -100mA
Ciss
-
Coss
VDS= -10V, VGS= 0V
-
f=1MHz
Crss
-
td(on)
-
t...