XU1001

33.0-40.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 U1001 Chip Device Layout Features Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC transmitter has a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF isolation. The device has a pair of sub-harmonic mixers configured to form an image reject mixer which requires an LO at 15.5-21.5 GHz. This is followed by a two stage LNA. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of the subharmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. U1001 General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Inp...