XU1005-BD

10.0-18.0 GHz GaAs MMIC Transmitter March 2007 - Rev 01-Mar-07 U1005-BD Chip Device Layout Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XU1005-BD Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter provides +17 dBm output third order intercept and 15 dB image rejection across the band. This device is an image reject, balanced mixer followed by a two stage output amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 250,150,250 mA +0.3 VD...