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XZM2MRTNI55W-8

SunLED

SMD CHIP LED LAMP

Part Number: XZM2MRTNI55W-8 3.2x1.6mm SMD CHIP LED LAMP Features ● Ideal for indication light on hand held products ● L...


SunLED

XZM2MRTNI55W-8

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Description
Part Number: XZM2MRTNI55W-8 3.2x1.6mm SMD CHIP LED LAMP Features ● Ideal for indication light on hand held products ● Long life and robust package ● Standard Package: 2,000pcs/ Reel ● MSL (Moisture Sensitivity Level): 3 ● RoHS compliant Package Schematics RED ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.008") unless otherwise noted. 3. Specifications are subject to change without notice. Absolute Maximum Ratings (TA=25°C) Red (AlGaInP) TNI (GaAs) Unit Operating Characteristics (TA=25°C) Red TNI (AlGaInP) (GaAs) Unit Reverse Voltage Forward Current Forward Current (Peak) 1/10 Duty Cycle 0.1ms Pulse Width VR 5 IF 30 iFS 150 5V 50 mA 1200 mA Power Dissipation Operating Temperature Storage Temperature PD TA Tstg 75 80 -40 ~ +85 -40 ~ +85 mW °C A Relative Humidity between 40% and 60% is recommended in ESD-protected work areas to reduce static build up during assembly process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033) Forward Voltage (Typ.) (IF=20mA) Forward Voltage (Max.) (IF=20mA) Reverse Current (Max.) (VR=5V) Wavelength of Peak Emission CIE127-2007* (Typ.) (IF=20mA) Wavelength of Dominant Emission CIE127-2007* (Typ.) (IF=20mA) Spectral Line Full Width At Half-Maximum (Typ.) (IF=20mA) VF VF IR λP λD △λ 2.1 2.5 10 660* 640* 20 1.2 V 1.6 V 10 uA 940* nm - nm 50 nm Capacitance (Typ.) (VF=0V, f=1MHz) C 45 90 pF Part Number Emitt...




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