STY60NK30Z
N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH™Power MOSFET
TYPE STY60NK30Z
s s s s s s
VDSS...
STY60NK30Z
N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH™Power
MOSFET
TYPE STY60NK30Z
s s s s s s
VDSS 300 V
RDS(on) < 0.045 Ω
ID 60 A
Pw 450 W
TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
Max247
2 1
3
DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high
voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH EFFICIENCY SWITCHING DC/DC CONVETERS FOR PLASMA TV’s s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
ORDERING INFORMATION
SALES TYPE STY60NK30Z MARKING Y60NK30Z PACKAGE Max247 PACKAGING TUBE
February 2004
1/8
Free Datasheet http://www.Datasheet4U.com
STY60NK30Z
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100 pF, R=1.5 KΩ) Peak Diode Recovery
voltage slope Operat...
