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YG339D6

Fuji Semiconductors

FAST RECOVERY DIODE

YG339C6,N6,D6 (5A) FAST RECOVERY DIODE (600V / 5A) Outline drawings, mm 10±0.5 +0.2 ø3.2 -0.1 4.5±0.2 2.7±0.2 2.7±...


Fuji Semiconductors

YG339D6

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YG339C6,N6,D6 (5A) FAST RECOVERY DIODE (600V / 5A) Outline drawings, mm 10±0.5 +0.2 ø3.2 -0.1 4.5±0.2 2.7±0.2 2.7±0.2 15±0.3 6.3 1.2±0.2 13Min 3.7±0.2 Features Insulated package by fully molding High voltage by mesa design High reliability Applications High speed switching Maximum ratings and characteristics Absolute maximum ratings 0.7±0.2 2.54±0.2 +0.2 0.6 -0 2.7±0.2 JEDEC EIAJ SC-67 Connection diagram YG339C6 1 2 YG339N6 1 2 YG339D6 1 2 3 3 3 Item Repetitive peak reverse voltage Symbol VRRM Conditions Rating 600 Unit V Non-repetitive peak reverse voltage VRSM 600 V Isolating voltage Viso Terminals-to-Case, AC.1min 1500 V Average output current Surge current IO Square wave, duty=1/2, Tc=110°C IFSM Sine wave 10ms 5* 20 A A Operating junction temperature Tj +150 °C Storage temperature Tstg Electrical characteristics (Ta=25°C Unless otherwise specified ) -40 to +150 °C *Average forward current of centertap full wave connection Item Symbol Conditions Max. Unit Forward voltage drop ** Reverse current ** Reverse recovery time Thermal resistance Mechanical characteristics VFM IRRM trr Rth(j-c) IFM=2.0A VR=VRRM IF=0.1A, IR=0.1A, Irec=0.01A Junction to case ** Rating per element 2.5 100 0.05 3.5 V µA µs °C/W Mounting torque Approximate weight Recommended torque 0.3 to 0.5 2.3 N·m g (600V / 5A ) Characteristics Forward Characteristic (typ.) IF Forward Current (A) 10 Tj=150°C 1 Tj=125°C Tj=100°C Tj=25°C 0.1 0.01 ...




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