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YG808C10R

Fuji Electric

SCHOTTKY BARRIER DIODE

YG808C10R SCHOTTKY BARRIER DIODE (100V / 30A TO-22OF15) Outline Drawings 10±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2....


Fuji Electric

YG808C10R

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YG808C10R SCHOTTKY BARRIER DIODE (100V / 30A TO-22OF15) Outline Drawings 10±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 3.7±0.2 1.2±0.2 13Min Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 0.7±0.2 2.54±0.2 0.6 -0 +0.2 2.7±0.2 JEDEC EIAJ SC-67 Applications High speed power switching. Connection Diagram 2 1 3 Maximum Ratings and Characteristics Absolute Maximum Ratings Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolation voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=80°C Square wave Sine wave 10ms Conditions Rating 100 100 1500 30* 180 +150 -40 to +150 Unit V V V A A °C °C Electrical Characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=10A VR=VRRM Junction to case * Out put current of centertap full wave connection. Max. 0.80 20.0 2.0 Unit V mA °C/W ** Rating per element Mechanical Characteristics Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 N·m g (100V / 30A TO-22OF15) Characteristics 100 YG808C10R Forward Characteristic (typ.) 10 3 Reverse Characteristic (typ.) Tj=150 C o Forward Current 10 Tj=150 C Tj=125 C Tj=100 C Tj=25 C o o o o (mA) 10 2 Tj=125 C o o (A) Tj=100 C Reverse Current 10 1 10 0 1 Tj...




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