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YG812S04R
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C...
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YG812S04R
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item Repetitive peak surge reverse
voltage Repetitive peak reverse
voltage Isolating
voltage Average forward current Non-repetitive forward surge current Operating junction temperature Storage temperature Symbols VRSM VRRM Viso IFAV IFSM Tj Tstg Conditions tw=500ns, duty=1/40 Terminals-to-case, AC.1min 50Hz Square wave duty =1/2 Tc = 124˚C Sine wave, 10ms 1shot Ratings 48 45 1500 10 120 150 -40 to +150
FUJI Diode
Units V V V A A ˚C ˚C
Electrical characteristics
Item Forward
voltage Reverse current Thermal resistance
(at Ta=25˚C unless otherwise specified.)
Symbols VF IR Rth(j-c) IF =10 A VR =VRRM Junction to case Conditions Maximum 0.6 2.0 2.5 Units V mA ˚C/W
Mechanical characteristics
Item Mounting torque Approximate mass Conditions Recommended torque Maximum 0.3 to 0.5 1.7 Units Nm g
1
YG812S04R
Outline Drawings [mm]
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FUJI Diode
YG812S04
YG812S04
2
YG812S04R
Forward Characteristic (typ.)
100
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Reverse Characteristic (typ.)
FUJI Diode
10
2
Tj=150°C
Tj=125°C
10 10
1
Tj=100°C Tj=150°C Tj=125°C Tj=100°C Tj=25°C (mA) Reverse Current
10
0
Forward Current (A)
10
-1
1
IF
IR
Tj=25°C
10
-2
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
-3
0
10
20
30
40
50
VF Forward
Voltage (V) Forward Power Dissipation (max.)
14
VR Reverse
Voltage (V)
Reverse Power Dissipation (...