PHENITEC
SEMICONDUCTOR
1A 40V(0.82mm)
YHE51
Schottky Barrier Diode
Chip Information
MAXIMUM RATINGS
Parameter
Symbol
Chip Size
0.82 x 0.82mm
Pad Size
0.68 x 0.68mm
Chip Quantity
16276 pcs/wafer
Scribe Line Width
60um
Passivation
PSG
Wafer Size
5 inch
Top Metallization
Al(For Wire)
Chip Thickness/Back Metal : See below "Ordering Information"
Limit
Unit
Note
Repetitive Peak Reverse Voltage
VRRM
40
Non-Repetitive Peak Reverse Voltage
VRSM
Maximum DC Blocking Voltage
VR
.
Schottky Barrier Diode
PHENITEC
SEMICONDUCTOR
1A 40V(0.82mm)
YHE51
Schottky Barrier Diode
Chip Information
MAXIMUM RATINGS
Parameter
Symbol
Chip Size
0.82 x 0.82mm
Pad Size
0.68 x 0.68mm
Chip Quantity
16276 pcs/wafer
Scribe Line Width
60um
Passivation
PSG
Wafer Size
5 inch
Top Metallization
Al(For Wire)
Chip Thickness/Back Metal : See below "Ordering Information"
Limit
Unit
Note
Repetitive Peak Reverse Voltage
VRRM
40
Non-Repetitive Peak Reverse Voltage
VRSM
Maximum DC Blocking Voltage
VR
Average Forward Rectified Current
IF(AV)
1000
Peak Forward Surge Current
IFSM
Storage and Operating Temperature Range Tj,TSTG
ELECTRICAL CHARACTERISTICS
10 -65 to +125
Parameter
Symbol Spec Limit Probe Spec
Maximum Forward Voltage
VF1 0.320 0.310
VF2 0.450
VF3 0.750
VF4
VF5
Maximum DC Reverse Current IR1
1000
300
IR2 50
40
IR3 75
65
IR4
V V V
mA A 8.3ms Single Half Sine-Wave
degC
Typical Unit
Test Condition
0.250 0.405 0.665
55 20 25
V IF=100mA V IF=1A V IF=3A V V uA .