YJG85G06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● ID (Package ...
YJG85G06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● ID (Package limited) ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested
60V
130A
85A ＜3.0 mohm ＜4.5 mohm
General Description
● Split Gate Trench
MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
● Synchronous-rectification applications
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source
Voltage
Gate-source
Voltage
Drain Current
Drain Current A Pulsed Drain Current B
TC=25℃ TC=100℃
Avalanche energy C
Total Power Dissipation D
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient E
Junction and Storage Temperature Range
■ Ordering Information (Example)
PREFERED P/N
PACKING CODE
Marking
VDS VGS ID
ID
IDM EAS ...
