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YJH03N10A Datasheet

Part Number YJH03N10A
Manufacturers Yangzhou Yangjie
Logo Yangzhou Yangjie
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet YJH03N10A DatasheetYJH03N10A Datasheet (PDF)

YJH03N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 100V 3A <110 mohm <120 mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage G.

  YJH03N10A   YJH03N10A






N-Channel Enhancement Mode Field Effect Transistor

YJH03N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 100V 3A <110 mohm <120 mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ Total Power Dissipation TA=25℃ TC=25℃ Thermal Resistance Junction-to-Ambient B Thermal Resistance Junction-to-Case Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking VDS VGS ID IDM PD RθJA RθJC TJ ,TSTG 100 ±20 3 2.4 12 1.5 4.0 83 31 -55~+150 V V A A W W ℃/ W ℃/ W ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) .


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