YJL03N06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at ...
YJL03N06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
60V
3A ＜100 mohm ＜120 mohm
General Description
● Trench Power MV
MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source
Voltage
Gate-source
Voltage Drain Current Pulsed Drain Current A
TA=25℃ TA=70℃
Total Power Dissipation @ TC=25℃
Thermal Resistance Junction-to-Ambient B
Junction and Storage Temperature Range
■ Ordering Information (Example)
PREFERED P/N
PACKING CODE
Marking
VDS VGS ID IDM PD RθJA TJ ,TSTG
60
±20 3 2.4 12
1.2
105
-55～+150
V V A A W ℃/ W ℃
MINIMUM PACKAGE(pcs)
INNER BOX QUANTITY(pcs)
OUTER CARTON QUANTITY(pcs)
DELIVERY MODE
YJL03N06A
F2
S10.
3000...
