YJL2305B
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at V...
YJL2305B
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V)
-20V
-5.4A ＜42 mohm ＜55 mohm ＜75 mohm
General Description
● Trench Power LV
MOSFET technology
● High Density Cell Design for Low RDS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Maximum
Unit
Drain-source
Voltage
Gate-source
Voltage Drain Current Pulsed Drain Current A
TA=25℃ Steady State TA=70℃ Steady State
Total Power Dissipation @ TA=25℃ Steady State Thermal Resistance Junction-to-Ambient @ Steady State B
Junction and Storage Temperature Range
■ Ordering Information (Example)
PREFERED P/N
PACKING CODE
Marking
VDS VGS ID IDM PD RθJA TJ ,TSTG
-20 ±10 -5.4 -4.4 -22
1.2
104 -55～+150
V V A A W ℃/ W ℃
MINIMUM PACKAGE(pcs)
...
