YJQ4666A
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at V...
YJQ4666A
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V)
-20V
-7A ＜26 mohm ＜34 mohm ＜55 mohm
General Description
● Trench Power LV
MOSFET technology
● Low RDS(ON)
● Low Gate Charge
Applications
● Battery charge
● Load switching in Cellular handset
● Ultraportable applications
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Maximum
Unit
Drain-source
Voltage
Gate-source
Voltage
Drain Current Pulsed Drain Current A
TA=25℃ TA=70℃
Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient B
Thermal Resistance Junction-to-Case
Junction and Storage Temperature Range
■ Ordering Information (Example)
PREFERED P/N
PACKING CODE
Marking
VDS VGS
ID
IDM PD RθJA RθJC TJ ,TSTG
-20 ±10
-7 -5.6 -28 2.5 50 15 -55～+150
V V A A W ℃/ W ℃
MINIMUM PACKAGE(pcs)
INNER BOX QUANTIT...
