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YJQ4666B
P-Channel Enhancement Mode Field Effect Transistor
Description
YJQ4666B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V) -16V -7A ＜32 mohm ＜42 mohm ＜60 mohm General Description ● Trench Power LV
MOSFET
technology ● Low RDS(ON) ● Low Gate Charge Applications ● Battery charge ● Load switching in Cel...
Yangzhou Yangjie
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