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YJS12G06A Datasheet

Part Number YJS12G06A
Manufacturers Yangzhou Yangjie
Logo Yangzhou Yangjie
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet YJS12G06A DatasheetYJS12G06A Datasheet (PDF)

YJS12G06A RoHS   COMPLIANT   N-Channel Enhancement Mode Field Effect Transistor Product Summary ●VDS ●ID(at VGS=10V) ●RDS(ON)( at VGS=10V) ●RDS(ON)( at VGS=4.5V) ●100% UIS Tested 100% Rg Tested 100% ▽VDS Tested 60V 12A <9.0mΩ <13.0mΩ Top View General Description ●Split Gate Trench Power MV MOSFET technology ●Low RDS(ON) ●Low Gate Charge ●Optimized for fast-switching applications Applications ●Synchronus Rectification in DC/DC and AC/DC Converters ●Industrial and Motor Drive application ■.

  YJS12G06A   YJS12G06A






N-Channel Enhancement Mode Field Effect Transistor

YJS12G06A RoHS   COMPLIANT   N-Channel Enhancement Mode Field Effect Transistor Product Summary ●VDS ●ID(at VGS=10V) ●RDS(ON)( at VGS=10V) ●RDS(ON)( at VGS=4.5V) ●100% UIS Tested 100% Rg Tested 100% ▽VDS Tested 60V 12A <9.0mΩ <13.0mΩ Top View General Description ●Split Gate Trench Power MV MOSFET technology ●Low RDS(ON) ●Low Gate Charge ●Optimized for fast-switching applications Applications ●Synchronus Rectification in DC/DC and AC/DC Converters ●Industrial and Motor Drive application ■Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage VDS Gate-source Voltage VGS Drain Current G Pulsed Drain Current C TC=25℃ TC=100℃ Avalanche energy L=0.5mH C ID IDM EAS Power Dissipation A TC=25℃ TC=100℃ Junction and Storage Temperature Range Thermal Characteristics PDSM TJ ,TSTG Parameter Junction-to-Ambient A Junction-to-Ambient A D T≤10s Steady-State Symbol RθJA Junction-to-Case .


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