YMP120N06
N-Channel
Enhancement Mode Power MOSFET
Features
● VDS=70V；ID=120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =10V ；
● L...
YMP120N06
N-Channel
Enhancement Mode Power
MOSFET
Features
● VDS=70V；ID=120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =10V ；
● Low gate charge ● Low Crss (typical 197pF) ● Fast switching ● 100% avalanche tested ● Improved dv/dt capability ● Rohs product
Product Summary
BVDSS typ. RDS(ON) typ.
max. ID
60
4 6 120
V mΩ mΩ A
100% UIS TESTED!
Application
● High efficiency switch mode power supplies
● UPS
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
YMP120N06
YMP120N06
TO-220-3L
Reel Size -
Tape width -
Quantity -
Table 1. Absolute Maximum Ratings (TA=25℃) Parameter
Drain-Source
Voltage (VGS=0V）
Gate-Source
Voltage (VDS=0V) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃)
Derating factor Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1....
