YMP230N55

YMP230N55 N-Channel Enhancement Mode Power MOSFET Product Summary BVDSS RDS(ON) typ. typ. max. ID 55 2 3 230 V mΩ mΩ A General Description The YMP230N55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features ● VDS=55V；ID=230A@ V GS =10V； RDS(ON)< 3 mΩ @ VGS =10V ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation 100% UIS TESTED! Application ● ● ● Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply TO-220-3L top view Schematic diagram Package Marking And Ordering Information Device Marking YMP230N55 Device YMP230N55 Device Package TO-220-3L Reel Size Tape width Quantity - Table 1. Absolute Maximum Ratings (TA=25℃) Parameter Symbol VDS VGS ID (DC) ID (DC) Value 55 ±25 230 170 900 Unit V V A A A W W/℃ mJ ℃ Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed Maximum Power Dissipation(Tc=25℃) Derating factor Single pulse avalanche energy (Note 2) (Note 1) IDM (pluse) PD EAS TJ,TSTG 300 1.33 2000 -55 To 175 Operating Junction and Storage Te...