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ZDX130N50

Rohm

Nch 500V 13A Power MOSFET

ZDX130N50 Nch 500V 13A Power MOSFET lOutline Datasheet VDSS RDS(on) (Max.) ID PD lFeatures 1) Low on-resistance. 2) Fa...


Rohm

ZDX130N50

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ZDX130N50 Nch 500V 13A Power MOSFET lOutline Datasheet VDSS RDS(on) (Max.) ID PD lFeatures 1) Low on-resistance. 2) Fast switching speed. 500V 0.52W -13A 40W TO-220FM (3) (2) (1) lInner circuit (1) Gate (2) Drain (3) Source *1 BODY DIODE 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Switching Power Supply Type Reel size (mm) Tape width (mm) Bulk 500 ZDX130N50 Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Tc = 25°C Symbol VDSS ID *1 ID,pulse *2 VGSS PD Tj Tstg Value 500 13 39 30 40 150 -55 to +150 Unit V A A V W °C °C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.08 - Rev.B Free Datasheet http://www.datasheet.in/ ZDX130N50 lThermal resistance Parameter Thermal resistance, junction - ambient Symbol RthJA Values Min. Typ. - Data Sheet Max. 3.125 Unit °C/W lElectrical characteristics(Ta = 25°C) Parameter Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Symbol Conditions Values Min. 500 Typ. Max. Unit V(BR)DSS VGS = 0V, ID = 1mA V IDSS IGSS VGS (th) VDS = 500...




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