ZDX130N50
Nch 500V 13A Power MOSFET
lOutline
Datasheet
VDSS RDS(on) (Max.) ID PD
lFeatures 1) Low on-resistance. 2) Fa...
ZDX130N50
Nch 500V 13A Power
MOSFET
lOutline
Datasheet
VDSS RDS(on) (Max.) ID PD
lFeatures 1) Low on-resistance. 2) Fast switching speed.
500V 0.52W -13A 40W
TO-220FM
(3) (2) (1)
lInner circuit
(1) Gate (2) Drain (3) Source *1 BODY DIODE
3) Gate-source
voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Switching Power Supply Type Reel size (mm) Tape width (mm)
Bulk 500 ZDX130N50
Basic ordering unit (pcs) Taping code Marking
lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source
voltage Continuous drain current Pulsed drain current Gate - Source
voltage Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Tc = 25°C Symbol VDSS ID *1 ID,pulse *2 VGSS PD Tj Tstg Value 500 13 39 30 40 150 -55 to +150 Unit V A A V W °C °C
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.08 - Rev.B
Free Datasheet http://www.datasheet.in/
ZDX130N50
lThermal resistance Parameter Thermal resistance, junction - ambient Symbol RthJA Values Min. Typ. -
Data Sheet
Max. 3.125
Unit °C/W
lElectrical characteristics(Ta = 25°C) Parameter Drain - Source breakdown
voltage Zero gate
voltage drain current Gate - Source leakage current Gate threshold
voltage Static drain - source on - state resistance Symbol Conditions Values Min. 500 Typ. Max. Unit
V(BR)DSS
VGS = 0V, ID = 1mA
V
IDSS IGSS VGS (th)
VDS = 500...