N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 – JULY 94 FEATURES * 60 Volt VDS * RDS(on)= 0.33Ω * Spice model ava...
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 – JULY 94 FEATURES * 60 Volt VDS * RDS(on)= 0.33Ω * Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive
ZVN4306A
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source
Voltage Continuous Drain Current at T amb =25°C Practical Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate Source
Voltage Power Dissipation at T amb =25°C Practical Power Dissipation at T amb =25°C* Operating and Storage Temperature Range SYMBOL V DS ID I DP I DM V GS P tot P totp T j :T stg VALUE 60 1.1 1.3 15 ± 20 850 1.13 -55 to +150 UNIT V A A A V mW W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown
Voltage Gate-Source Threshold
Voltage Gate-Body Leakage Zero Gate
Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 12 0.22 0.32 700 0.33 0.45 60 1.3 3 100 10 100 TYP. MAX. UNIT CONDITIONS. V V nA µA µA A Ω Ω mS I D =1mA, V GS =0V ID=1mA, V DS = V GS V GS = ± 20V, V DS =0V V DS =60V, V GS =0 V DS =48V, V GS =0V, T=125°C (2) V DS =10V, V GS =10V V GS =10V,I D =3A V GS =5V, I D =1.5A V DS =25V,I D =3A
g fs
3-390
ZVN4306A
ELECTRICAL CHARACTERISTIC...