ZVN4306G

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * Very low RDS(ON) = .33Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive PARTMARKING DETAIL ZVN4306 ZVN4306G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg TYP. MAX. VALUE 60 2.1 15 ± 20 3 -55 to +150 UNIT V A A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. 60 BVDSS VGS(th) IGSS IDSS 12 0.22 0.32 0.7 350 140 30 8 25 30 16 0.33 0.45 1.3 UNIT CONDITIONS. V ID=1mA, VGS=0V V nA µA µA A Ω Ω S pF pF pF ns ns ns ns VDD ≈25V, VGEN=10V, ID=3A ID=1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=60V, VGS=0V VDS=48V, VGS=0V, T=125°C(2) VDS=10V, VGS=10V VGS=10V, ID=3A VGS=5V, ID=1.5A VDS=25V,ID=3A 3 20 10 100 On-State Drain ID(on) Current(1) Static Drain-Source RDS(on) On-State Resistance (1) Forward Transconductance (1) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf VDS=25 V, VGS=0V, f=1MHz (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%...