P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPTEMBER 94 FEATURES * 240 Volt VDS * RDS(on)=9Ω * Low threshold...
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPTEMBER 94 FEATURES * 240 Volt VDS * RDS(on)=9Ω * Low threshold APPLICATIONS * Electronic Hook Switch
ZVP4424C
G D S
REFER TO ZVP4424A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source
Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source
Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
SYMBOL
VDS ID IDM VGS Ptot Tj:Tstg
E-Line TO92 Compatible
VALUE -240 -200 -1 ± 40 750
-55 to +150
UNIT V mA A V
mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown BVDSS -240
Voltage
V
ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -0.7 -1.4 -2.0 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
IGSS
Zero Gate
Voltage Drain IDSS Current
100 nA -10 µA -100 µA
VGS=± 40V, VDS=0V VDS=-240 V, VGS=0 VDS=-190V, VGS=0V, T=125°C
On-State Drain Current
Static Drain-Source On-State Resistance
Forward Transconductance (1) (2)
ID(on) RDS(on)
gfs
-0.75 -1.0
7.1 9 8.8 11
125
A
VDS=-10 V, VGS=-10V
Ω
VGS=-10V,ID=-200mA
Ω
VGS=-3.5V,ID=-100mA
mS VDS=-10V,ID=-0.2A
Input Capacitance (2)
Ciss
Common Source Output Coss Capacitance (2)
100 200 pF 18 25 pF
VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer
Crss
Capacitance (2)
5
15 pF
Turn-On Delay Time (2)(3) td(on)
8
15 ns
Rise Time (2)(3)
tr
Turn-Off Delay Time (2)(3) td(off)
8 26
15 40
ns ns
VDD ≈−50V, ID =-0.25A, VG...