ZXMN3F31DN8 30V SO8 dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS 30
RDS(on) (Ω) 0.024 @ VGS= 10V 0.039 @ V...
ZXMN3F31DN8 30V SO8 dual N-channel enhancement mode
MOSFET
Summary
V(BR)DSS 30
RDS(on) (Ω) 0.024 @ VGS= 10V 0.039 @ VGS= 4.5V
ID (A) 7.3 5.7
Description
This new generation Trench
MOSFET from Zetex features low onresistance achievable with 4.5V gate drive.
Features
Low on-resistance 4.5V gate drive capability
Applications
DC-DC Converters Power management functions Load switching Motor control Back lighting
Ordering information
DEVICE ZXMN3F31DN8TA
Reel size (inches)
7
Tape width (mm)
12
G1
Quantity per reel
500
D1
S1
S1 G1 S2 G2
Device marking
ZXMN 3F31D
G2
D2
S2
D1 D1 D2 D2
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN3F31DN8
Absolute maximum ratings
Parameter Drain source
voltage
Gate source
voltage
Continous Drain Current @ VGS=10; TA=25°C(b) @ VGS=10; TA=70°C(b) @ VGS=10; TA=25°C(a)
Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissip...
