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ZXMP2120G4
200V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200...
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ZXMP2120G4
200V P-CHANNEL ENHANCEMENT MODE
MOSFET
SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA
DESCRIPTION This 200V enhancement mode P-channel
MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high
voltage circuits. A SOT23-5 version is also available (ZXMP2120E5).
SOT223
FEATURES
High
voltage Low on-resistance Fast switching speed Low gate drive Low threshold SOT223 package variant engineered to increase spacing between
high
voltage pins.
APPLICATIONS
Active clamping of primary side
MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
DEVICE ZXMP2120G4TA ZXMP2120G4TC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1,000 units 4,000 units
N/C
PINOUT - TOP VIEW DEVICE MARKING
ZXMP 2120
ISSUE 1 - DECEMBER 2005 1
ZXMP2120G4
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source
Voltage Gate Source
Voltage Continuous Drain Current (VGS =10V; Tamb =25°C) Pulsed Drain Current
(c) (c) (a)
SYMBOL V DS V GS ID I DM I SM P tot
VALUE -200 Ϯ20
-200
UNIT V V mA A A W mW/°C °C
-1.2 -1.2 2.0 1.6
Pulsed Source Current (Body Diode) Power Dissipation at T amb =25°C Linear derating factor
(a)
Operating and Storage Temperature Range
T j :T stg
-55 to +150
THERMAL RESISTANCE
PARAMET...