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TRANSISTOR. ZXTP2006E6 Datasheet |
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ZXTP2006E6
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
SUMMARY
BVCEO = -20V : RSAT = 31m ; IC = -3.5A
DESCRIPTION
Packaged in the SOT23-6 outline this new low
saturation 20V PNP transistor offers extremely low on
state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
• 3.5 Amps continuous current
• Extremely low saturation voltage (-70mV max @ 1A/100mA )
• Up to 10 Amps peak current
• Very low saturation voltages
APPLICATIONS
• DC - DC converters
• Battery charging
• Power switches
• Motor control
• Power management functions
ORDERING INFORMATION
DEVICE
ZXTP2006E6TA
ZXTP2006E6TC
REEL
SIZE
7”
13”
TAPE WIDTH
QUANTITY PER REEL
8mm embossed
8mm embossed
3,000
10,000
DEVICE MARKING
52
SOT23-6
PINOUT
TOP VIEW
ISSUE 1 - JUNE 2005
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ZXTP2006E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at TA =25°C (a)
Linear derating factor
Power dissipation at TA =25°C (b)
Linear derating factor
SYMBOL
BVCBO
BVCEO
BVEBO
IC
ICM
PD
PD
LIMIT
-25
-20
-7.5
-3.5
-10
1.1
8.8
1.7
13.6
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient (a)
Junction to ambient (b)
SYMBOL
R⍜JA
R⍜JC
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) As above measured at t<5 seconds.
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CHARACTERISTICS
ZXTP2006E6
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