TRANSISTOR. ZXTP2006E6 Datasheet

ZXTP2006E6 Datasheet PDF

Part ZXTP2006E6
Description PNP LOW SAT MEDIUM POWER TRANSISTOR
Feature ZXTP2006E6; www.DataSheet4U.com ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = .
Manufacture Zetex Semiconductors
Datasheet
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ZXTP2006E6
www.DataSheet4U.com
ZXTP2006E6
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
SUMMARY
BVCEO = -20V : RSAT = 31m ; IC = -3.5A
DESCRIPTION
Packaged in the SOT23-6 outline this new low
saturation 20V PNP transistor offers extremely low on
state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
3.5 Amps continuous current
Extremely low saturation voltage (-70mV max @ 1A/100mA )
Up to 10 Amps peak current
Very low saturation voltages
APPLICATIONS
DC - DC converters
Battery charging
Power switches
Motor control
Power management functions
ORDERING INFORMATION
DEVICE
ZXTP2006E6TA
ZXTP2006E6TC
REEL
SIZE
7”
13”
TAPE WIDTH
QUANTITY PER REEL
8mm embossed
8mm embossed
3,000
10,000
DEVICE MARKING
52
SOT23-6
PINOUT
TOP VIEW
ISSUE 1 - JUNE 2005
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ZXTP2006E6
ZXTP2006E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at TA =25°C (a)
Linear derating factor
Power dissipation at TA =25°C (b)
Linear derating factor
SYMBOL
BVCBO
BVCEO
BVEBO
IC
ICM
PD
PD
LIMIT
-25
-20
-7.5
-3.5
-10
1.1
8.8
1.7
13.6
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient (a)
Junction to ambient (b)
SYMBOL
RJA
RJC
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) As above measured at t<5 seconds.
ISSUE 1 - JUNE 2005
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ZXTP2006E6
CHARACTERISTICS
ZXTP2006E6
ISSUE 1 - JUNE 2005
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