uPA2757GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2757GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. FEATURES Low on-state resistance RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) Low gate charge QG = 10 nC TYP. (VGS = 10 V) Built-in G-S protection diode Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit: mm) 85 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 14 5.37 MAX. 6.0 ± 0.3 4.4 0.8 +0.10 –0.05 0.15 1.27 0.78 MAX. 0.5 ± 0.2 0.10 1.8 MAX. 0.05 MIN. 1.44 ORDERING INFORMATION 0.40 +0.10 –0.05 0.12 M PART NUMBER LEAD PLATING PACKING PACKAGE μ PA2757GR-E1-AT Note μ PA2757GR-E2-AT Note Pure Sn Tape 2500 p/reel Power SOP8 Note Pb-free (This product does not contain Pb in the external electrode and other parts.) EQUIVALENT CIRCUIT (1/2 circuit) Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD ± 600 V TYP. (C = 100 pF, R = 1.5 kΩ) The...