uPD16818

DATA SHEET MOS INTEGRATED CIRCUIT µPD16818 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar transistors. In addition, the drive current can be adjusted by an external resistor in power-saving mode. The µPD16818 is therefore ideal as the driver circuit of a 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD. FEATURES Compatible with 3V-/5V- supply voltage Pin compatible with µPD16803 Low ON resistance (sum of ON resistors of top and bottom MOS FETs) RON1= 1.2 Ω (VM = 3.0 V) RON2 = 1.0 Ω (VM = 5.0 V) Low current consumption: IDD = 0.4 mA TYP. (VDD = 2.7 V to 3.6 V) Stop mode function that turns OFF all output MOS FETs Drive current can be set in power-saving mode (set by external resistor) Compact surface mount package ORDERING INFORMATION Part Number Package µPD16818GS 20-pin plastic SOP (7.62 mm (300)) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Symbol Condition Supply voltage Motor block VM Control block VDD Power µPD16818GS PD1 consumption PD2 Instantaneous H bridge drive current ID (pulse) PW ≤ 5 ms, Duty ≤ 40 % Input voltage VIN Operating temperature range TA Operation junction temp...