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TK150E09NE

Toshiba Semiconductor

MOSFET

Description
TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H) TK150E09NE  E-Bike  Low drain−source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V)  Low leakage current : IDSS = 10 μA (max) (VDS = 85 V)  Enhancement mode : Vth = 2.5~4.5 V (VDS = 10 V, ID = 1.0 mA) 10.2±0.3 Φ3.7±0.1 A 2.74 6.51 Unit: mm 1.27±0.1 8.59±0....


Toshiba Semiconductor

TK150E09NE

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