|
|
|
Ver 1.0
BCT2232
High-Output-Drive, 10MHz, 10V/μs,
Rail-to-Rail I/O Op Amps
General Description
The BCT2232 dual, high-output drive CMOS op
amps feature 200mA of peak output current,
rail-to-rail input, and output capability from a single
2.7V to 5.5V supply. These amplifiers exhibit a high
slew rate of 10V/μs and a gain-bandwidth (GBW) of
10MHz. The BCT2232 can drive headset levels
(32Ω), as well as bias an RF power amplifier (PA) in
wireless handset applications.
The BCT2232 offers low offsets, wide bandwidth,
and high-output drive in a space-saving SOP-8
package. These parts are offered over the industrial
temperature range (-40°C to +85°C).
Features
_ 30mA Output Drive Capability
_ Rail-to-Rail Input and Output
_ 1.1mA Supply Current per Amplifier
_ 2.7V to 5.5V Single-Supply Operation
_ 10MHz Gain-Bandwidth Product
_ High Slew Rate: 10V/μs
_ 100dB Voltage Gain (RL = 100kΩ)
_ 85dB Power-Supply Rejection Ratio
_ No Phase Reversal for Overdriven Inputs
_ Unity-Gain Stable for Capacitive Loads to 780pF
_ Available in SOP-8 package
Applications
RF PA Biasing Controls in Handset Applications
Portable/Battery-Powered Audio Applications
Portable Headphone Speaker Drivers (32Ω)
Audio Hands-Free Car Phones (Kits)
Laptop/Notebook Computers/TFT Panels
Set-Top Boxes
Digital-to-Analog Converter Buffers
Transformer/Line Drivers
Motor Drivers
Application Circuit
Ordering Information
PART
PIN-PACKAGE
BCT2232ESA-TR SOP-8
Temp-Range
-40°C to +85°C
Top Mark Supplied as:
2232
3000units/Tape&Reel
www.broadchip.com
1
|
Ver 1.0
Functional Pin Description
Pin Name
Function
1
OUTA
Amplifier A Output
2
-INA
Inverting Input to Amplifier A
3
+INA
Non inverting Input to Amplifier A
4 -VS Negative Supply Input. Connect to ground for single-supply operation.
5
+INB
Non inverting Input to Amplifier B
6
-INB
Inverting Input to Amplifier B
7
OUTB
Amplifier B Output
8 +VS Positive Supply Input
ABSOLUTE MAXIMUM RATINGS
Supply Voltage (VDD to VSS) .........................................................................................................................6V
All Other Pins ...........................................................................................................(VSS - 0.3V) + (VDD + 0.3V)
Output Short-Circuit Duration to VDD or VSS ...............................................................................................1s
Continuous Power Dissipation (TA = +70°C)
8-Pin SOP (derate 8.9mW/°C above +70°C) ........................................................................................714mW
Operating Temperature Range .........................................................................................................-40°C to +125°C
Junction Temperature.......................................................................................................................................+150°C
Storage Temperature Range ............................................................................................................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................................................................................................+300°C
Note 1:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(VDD = 2.7V, VSS = 0V, VCM = VDD/2, VOUT = (VDD/2), RL = connected to (VDD/2), TA = +25°C )
PARAMETER
Operating Supply
Voltage Range
Input Offset Voltage
SYMBOL CONDITIONS
VDD
Inferred from PSRR test
VOS
MIN TYP MAX
2.7 5.5
0.85 ±6
Input Bias Current
IB
VCM = VSS to VDD
50
Input Offset Current IOS
VCM = VSS to VDD
50
Input Resistance
Common-Mode Input
Voltage Range
Common-Mode
Rejection Ratio
Power-Supply
Rejection Ratio
Large-Signal Voltage
Gain
RIN
VCM
CMRR
PSRR
AVOL
Inferred from CMRR test
VSS < VCM < VDD
VDD = 2.7V to 5.5V
VSS + 0.20 < VOUT
< VDD - 0.20V
RL= 100kΩ
RL = 2kΩ
RL = 200Ω
VSS
52
73
85
74
1000
70
85
100
98
80
VDD
UNITS
V
mV
pA
pA
MΩ
V
dB
dB
dB
www.broadchip.com
2
|
Ver 1.0
DC ELECTRICAL CHARACTERISTICS (continued)
(VDD = 2.7V, VSS = 0V, VCM = VDD/2, VOUT = (VDD/2), RL = connected to (VDD/2), TA = +25°C )
PARAMETER SYMBOL
CONDITIONS
MIN TYP MAX
RL = 32Ω
VDD - VOH
VOL - VSS
400 500
360 500
Output Voltage
Swing
VOUT
RL = 200Ω
VDD - VOH
VOL - VSS
80 120
70 120
RL = 2kΩ
VDD - VOH
VOL - VSS
8 14
7 14
Output Source/
Sink Current
VOUT = 0.15V
to (VDD - 0.15V)
7 10
Output Voltage
with Current
Load
IL = 10mA
IL = 30mA
VDD = 2.7V
VDD = 5V
VDD - VOH
VOL - VSS
VDD - VOH
VOL - VSS
128 200
112 175
240 320
224 300
Quiescent
VDD = 5.5V, VCM = VDD / 2
1.2 2.3
Supply Current
(per Amplifier)
IDD
VDD = 2.7V, VCM = VDD / 2
1.1 2.0
UNITS
mV
mA
mV
mA
AC ELECTRICAL CHARACTERISTICS
(VDD = 2.7V, VSS = 0V, VCM = VDD/2, VOUT = (VDD/2), RL = connected to (VDD/2), TA = +25°C )
PARAMETER
SYMBOL CONDITIONS
MIN TYP
MAX
Gain-Bandwidth Product
GBWP VCM = VDD/2
10
Full-Power Bandwidth
FPBW
VOUT = 2VP-P, VDD = 5V
0.8
Slew Rate
SR
10
Phase Margin
PM
70
Gain Margin
GM
15
Total Harmonic Distortion
Plus Noise
THD+N
f = 10kHz, VOUT = 2VP-P,
AVCL = 1V/V
0.0005
Input Capacitance
CIN
8
f = 1kHz
Voltage Noise Density
en
f = 10kHz
15
12
Channel-to-Channel Isolation
f = 1kHz, RL = 100kΩ
125
Capacitive-Load Stability
AVCL = 1V/V, no sustained
oscillations
780
Power-Up Time
tON
5
UNITS
MHz
MHz
V/μs
Degrees
dB
%
pF
nV/√Hz
dB
pF
μs
www.broadchip.com
3
|
Total : 4 PagesDownload Full Datasheet PDF file |