| Part Number | BCR139T |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Title | NPN Silicon Digital Transistor |
| Description | BCR139... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ) BCR1... |
| Features |
C
Unit K/W
2
Sep-03-2003
BCR139...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)C... |
| Datasheet | BCR139T pdf datasheet - 185.09KB |
| Part Number | BCR139L3 |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon Digital Transistor |
| Description | BCR139... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ) BCR1. |
| Features |
C
Unit K/W
2
Sep-03-2003
BCR139...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)C. |
| Datasheet | BCR139L3 pdf datasheet |
| Part Number | BCR139F |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon Digital Transistor |
| Description | BCR139... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ) BCR1. |
| Features |
C
Unit K/W
2
Sep-03-2003
BCR139...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)C. |
| Datasheet | BCR139F pdf datasheet |
| Part Number | BCR139 |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon Digital Transistor |
| Description | BCR139... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ) BCR1. |
| Features |
C
Unit K/W
2
Sep-03-2003
BCR139...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)C. |
| Datasheet | BCR139 pdf datasheet |
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