| Part Number | HM4264 |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appli... |
| Features |
● VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching a... |
| Datasheet | HM4264 pdf datasheet |
| Part Number | HM4264B |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appl. |
| Features |
● VDS = 50V,ID =1A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching . |
| Datasheet | HM4264B pdf datasheet |
| Part Number | HM4260 |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appli. |
| Features |
● VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology f. |
| Datasheet | HM4260 pdf datasheet |
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