| Part Number | 2SC4294 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Good Linearity of hFE ·Minimum Lot... |
| Features |
GE Semiconductor
2SC4294
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
1.5
V
ICBO
Collector Cutoff Current
... |
| Datasheet | 2SC4294 pdf datasheet - 184.76KB |
| Part Number | 2SC4299 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust. |
| Features |
ollector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 1A. |
| Datasheet | 2SC4299 pdf datasheet |
| Part Number | 2SC4299 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PML package ·High voltage ,high switching speed ·Wide area of safe operation APPLICATIONS 2SC4299 ·For switching regulator and general. |
| Features |
on voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; IB=0 IC=1A;IB=0.2A IC=1A;IB=0.2A VCB=800V ;IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=-0.3A ; VCE=12V VCB=10V;f=1MHz 10 6 50 MIN 800 0.5 1. |
| Datasheet | 2SC4299 pdf datasheet |
| Part Number | 2SC4299 |
| Manufacturer | Sanken electric |
| Title | Silicon NPN Transistor |
| Description | 2SC4299 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC. |
| Features |
Approx 6.5g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical) 3 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) I C – V BE Temperature Characteristic. |
| Datasheet | 2SC4299 pdf datasheet |
| Part Number | 2SC4298 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust. |
| Features |
B= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
ICBO
Collector Cutoff Current
VCB= 500V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 8A ; VCE= 4V
COB
Output Capacitance
IE= 0 ; . |
| Datasheet | 2SC4298 pdf datasheet |
| Part Number | 2SC4298 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS 2SC4298 ·For switching regulator and general purpose applications PINNING. |
| Features |
ration voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA; IB=0 IC=8A;IB=1.6A IC=8A;IB=1.6A VCB=500V ;IE=0 VEB=10V; IC=0 IC=8A ; VCE=4V IE=-1.5A ; VCE=12V VCB=10V;f=1MHz 10 10 85 MIN 400 0.5 1.3 100 100 30 MHz pF TYP. . |
| Datasheet | 2SC4298 pdf datasheet |
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