| Part Number | BD145 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(... |
| Features |
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 60V ; IE= ... |
| Datasheet | BD145 pdf datasheet - 175.07KB |
| Part Number | BD1484EFJ |
| Manufacturer | Rohm |
| Title | Synchronous Buck Converter integrated FET |
| Description | The BD1484EFJ is a synchronous step-down switching regulator that integrates 2 low ON-resistance N-channel MOSFETs. It achieves 3A continuous outp. |
| Features |
Low ESR Output Ceramic Capacitors are Available Low Standby Current during Shutdown Mode 380 kHz Fixed Operating Frequency Feedback voltage 0.925V ± 1.5%(Ta=25℃), 0.925V ± 2.0%(Ta=-25℃ to 85℃) Protection Circuits Under Voltage Lockout Protection Thermal Shutdown Over Current Prot. |
| Datasheet | BD1484EFJ pdf datasheet |
| Part Number | BD1482EFJ |
| Manufacturer | Rohm |
| Title | Synchronous Buck Converter integrated FET |
| Description | The BD1482EFJ is a synchronous step-down switching regulator that integrates 2 low ON-resistance N-channel MOSFETs. It achieves 2A continuous outp. |
| Features |
Low ESR Output Ceramic Capacitors are Available Low Standby Current during Shutdown Mode 380 kHz Fixed Operating Frequency Feedback voltage 0.923V ± 1.5%(Ta=25℃), 0.923V ± 2.0%(Ta=-25℃ to 85℃) Protection Circuits Under Voltage Lockout Protection Thermal Shutdown Over Current Prot. |
| Datasheet | BD1482EFJ pdf datasheet |
| Part Number | BD142 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL. |
| Features |
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 4V
ICBO
Collector Cutoff Current
. |
| Datasheet | BD142 pdf datasheet |
| Part Number | BD142 |
| Manufacturer | Comset Semiconductors |
| Title | NPN Silicon Transistor |
| Description | BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation . |
| Features |
Collector-Emitter Saturation Voltage (*) Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Base-Emitter Voltage (*) Second Breakdown collector current Static Forward Current Transfer Ratio (*)
Test Condition(s)
IC=200 mA, IB=0 IC=100 mA, VBE=-1.5 V IC=4 A, IB=0.4 A VCE= 40 V, VBE=-1.5 V. |
| Datasheet | BD142 pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy