| Part Number | APT5010JVR |
| Manufacturer | Advanced Power Technology |
| Title | Power MOSFET |
| Description | APT5010JVR 500V 44A 0.100Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This ... |
| Features |
tts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State D... |
| Datasheet | APT5010JVR pdf datasheet - 71.39KB |
| Part Number | APT5010JVRU3 |
| Manufacturer | Advanced Power Technology |
| Title | Power MOSFET |
| Description | APT5010JVRU3 500V 44A 0.100Ω S G D A POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Thi. |
| Features |
0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-. |
| Datasheet | APT5010JVRU3 pdf datasheet |
| Part Number | APT5010JVRU2 |
| Manufacturer | Advanced Power Technology |
| Title | Power MOSFET |
| Description | APT5010JVRU2 500V 44A 0.100Ω S G D K POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Thi. |
| Features |
re: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Dra. |
| Datasheet | APT5010JVRU2 pdf datasheet |
| Part Number | APT5010JVFR |
| Manufacturer | Advanced Power Technology |
| Title | Power MOSFET |
| Description | APT5010JVFR 500V 44A 0.100Ω S G D S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOS. |
| Features |
Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Break. |
| Datasheet | APT5010JVFR pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy