| Part Number | PHP37N06T |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | TrenchMOS transistor Standard level FET |
| Description | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very ... |
| Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHP37N06T
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total po... |
| Datasheet | PHP37N06T pdf datasheet |
| Part Number | PHP37N06LT |
| Manufacturer | NXP |
| Title | TrenchMOS transistor Logic level FET |
| Description | N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on. |
| Features |
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP37N06LT, PHB37N06LT, PHD37N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 37 A g s RDS(ON) ≤ 35 mΩ (VGS = 5 V) RDS(ON) ≤ 32. |
| Datasheet | PHP37N06LT pdf datasheet |
| Part Number | PHP37N06 |
| Manufacturer | NXP |
| Title | TrenchMOS transistor Standard level FET |
| Description | N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on. |
| Features |
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP37N06LT, PHB37N06LT, PHD37N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 37 A g s RDS(ON) ≤ 35 mΩ (VGS = 5 V) RDS(ON) ≤ 32. |
| Datasheet | PHP37N06 pdf datasheet |
| Part Number | PHP37N06 |
| Manufacturer | NXP |
| Title | TrenchMOS transistor Logic level FET |
| Description | N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on. |
| Features |
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP37N06LT, PHB37N06LT, PHD37N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 37 A g s RDS(ON) ≤ 35 mΩ (VGS = 5 V) RDS(ON) ≤ 32. |
| Datasheet | PHP37N06 pdf datasheet |
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