| Part Number | NTE470 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 3... |
| Features |
D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficiency = 40% D Intermodulation Distortion @ 100W (PEP): IMD = –30dB Min D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Absolute Maximum Ratings: Collector –Emitter Voltage, VCEO . . . . . ... |
| Datasheet | NTE470 pdf datasheet - 24.07KB |
| Part Number | NTE478 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitte. |
| Features |
D Designed for VHF Military and Commercial Equipment D 100W Min with Greater than 6.0dB Gain D Withstands Infinite VSWR under Operating Conditions D Low Intermodulation Distortion ( –32dB) D Diffused Emitter Resistors Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) Collector –Base Vo. |
| Datasheet | NTE478 pdf datasheet |
| Part Number | NTE477 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D . |
| Features |
D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold metallization for high reliability, and good performances D Low thermal resistance ceramic package with flange D Ability of withstanding more than 20:1 load VSWR when operated at VCC = 15.2V. |
| Datasheet | NTE477 pdf datasheet |
| Part Number | NTE476 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode design. This feature together with a heavily diff. |
| Features |
D Designed for VHF mobile and marine transmitters D High efficiency at maximum stability D Improved metallization to achieve extreme ruggedness Absolute Maximum Ratings: (TA = +25°C except where specified) Collector –Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
| Datasheet | NTE476 pdf datasheet |
| Part Number | NTE475 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz. Absolute M. |
| Features |
5°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.3mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . |
| Datasheet | NTE475 pdf datasheet |
| Part Number | NTE473 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equip. |
| Features |
D Specified 175MHz, 28V Characteristics: Output Power: 2.5W Minimum Gain: 10dB Efficiency: 50% Absolute Maximum Ratings: Collector –Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector –Base Voltage, VCB . . . . |
| Datasheet | NTE473 pdf datasheet |
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