| Part Number | IRG4PC30UD |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD 91462B IRG4PC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating freq... |
| Features |
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes... |
| Datasheet | IRG4PC30UD pdf datasheet - 215.84KB |
| Part Number | IRG4PC30UPBF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD - 94923 IRG4PC30UPbF INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies . |
| Features |
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package Lead-Free
C
G E
n-channel
Benefits
Generat. |
| Datasheet | IRG4PC30UPBF pdf datasheet |
| Part Number | IRG4PC30UDPBF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating . |
| Features |
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diode. |
| Datasheet | IRG4PC30UDPBF pdf datasheet |
| Part Number | IRG4PC30U |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD 91461E IRG4PC30U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, . |
| Features |
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on. |
| Datasheet | IRG4PC30U pdf datasheet |
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