| Part Number | LP6872 |
| Manufacturer | Filtronic Compound Semiconductors |
| Title | 0.5W POWER PHEMT |
| Description | AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP6872 is an Al... |
| Features |
♦ 27 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency
DRAIN BOND PAD (2X) SOURCE BOND PAD (2x)
LP6872
GATE BOND PAD (2X)
• DESCRIPTION AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.... |
| Datasheet | LP6872 pdf datasheet - 38.59KB |
| Part Number | LP6872P100 |
| Manufacturer | Filtronic Compound Semiconductors |
| Title | Packaged 0.5W Power PHEMT |
| Description | AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobi. |
| Features |
LP6872P100
Packaged 0.5W Power PHEMT GATE
• • • • • +27 dBm Typical Power at 15 GHz 11 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN DESCRIPTION AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arse. |
| Datasheet | LP6872P100 pdf datasheet |
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