| Part Number | C5388 |
| Manufacturer | Sanyo Semicon Device |
| Title | 2SC5388 |
| Description | www..com Ordering number:ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features ·... |
| Features |
· High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5388] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Max... |
| Datasheet | C5388 pdf datasheet |
| Part Number | C5387 |
| Manufacturer | Toshiba Semiconductor |
| Title | 2SC5387 |
| Description | 2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH . |
| Features |
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. . |
| Datasheet | C5387 pdf datasheet |
| Part Number | C5386 |
| Manufacturer | Inchange Semiconductor |
| Title | NPN Power Transistor |
| Description | ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perf. |
| Features |
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
IEBO
Emitt. |
| Datasheet | C5386 pdf datasheet |
| Part Number | C5386 |
| Manufacturer | Toshiba |
| Title | NPN TRANSISTOR |
| Description | 2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH . |
| Features |
ter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Switching Time
Storage Time Fall Time
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat)
fT Cob tstg
tf
VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 6 A IC = 6 A, IB . |
| Datasheet | C5386 pdf datasheet |
| Part Number | C5383 |
| Manufacturer | Isahaya Electronics |
| Title | SMALL-SIGNAL TRANSISTOR |
| Description | 2SC5383 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. . 〈SMA. |
| Features |
●Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ●Excellent linearity of DC forward gain. ●Ultra super mini package for easy mounting ① ②③ 0.7 0.55 0～0.1 0.15 APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. MAXIMUM RATIN. |
| Datasheet | C5383 pdf datasheet |
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