Part Number | 2SB913 |
Manufacturer | Sanyo Semicon Device |
Title | PNP Transistor |
Description | Ordering number:1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications · Motor drivers, p... |
Features |
· High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2022A [2SB913/2SD1230] ( ) : 2SB913 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Co... |
Datasheet | 2SB913 pdf datasheet - 148.80KB |
Part Number | 2SB919 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·High Collector Current: IC= -8A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -3A ·Complement to Type 2SD1235 ·Minimum Lot-to-Lot . |
Features |
1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1. |
Datasheet | 2SB919 pdf datasheet |
Part Number | 2SB919 |
Manufacturer | SavantIC |
Title | SILICON POWER TRANSISTOR |
Description | ·With TO-220C package ·Complement to type 2SD1235 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Large current switching . |
Features |
reakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA; RBE=; IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-3A; IB=-0.15A VCB=-40. |
Datasheet | 2SB919 pdf datasheet |
Part Number | 2SB919 |
Manufacturer | Sanyo Semicon Device |
Title | PNP Transistor |
Description | Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications · Large . |
Features |
· Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2010C [2SB919/2SD1235] ( ) : 2SB919 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em. |
Datasheet | 2SB919 pdf datasheet |
Part Number | 2SB912 |
Manufacturer | Sanyo Semicon Device |
Title | PNP Transistor |
Description | Ordering number:1028B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB912/2SD1229 Driver Applications Applications · Motor drivers, p. |
Features |
· High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2022A [2SB912/2SD1229] ( ) : 2SB912 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Co. |
Datasheet | 2SB912 pdf datasheet |
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