| Part Number | 2SA1327A |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | TRANSISTOR |
| Description | ... |
| Features |
... |
| Datasheet | 2SA1327A pdf datasheet - 152.58KB |
| Part Number | 2SA1327 |
| Manufacturer | Toshiba |
| Title | SILICON PNP TRANSISTOR |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . MIN. h FE of 70 at -2V, -8A . . |
| Features |
. MIN. h FE of 70 at -2V, -8A . -10A Rated Collector Current . MAX. VcE(sat) of -0.5V at -8A Iq . 20W at 25°C Case Temperature
Unit in mm
10.3MAX„ 03.2 + 0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Base Cur. |
| Datasheet | 2SA1327 pdf datasheet |
| Part Number | 2SA1327 |
| Manufacturer | Inchange Semiconductor |
| Title | POWER TRANSISTOR |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@IC= -8A ·High DC Current Gain- : hFE= 70(Min.)@ IC= -8A ·Minimum Lot-to-Lot variations . |
| Features |
O Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A
VBE(on) Base-Emitter On Voltage
IC= -8A; VCE= -2V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -8V; IC= 0
hFE-1
DC Current Gain
IC= -. |
| Datasheet | 2SA1327 pdf datasheet |
| Part Number | 2SA1327 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·Low collector saturation voltage ·High current capacity APPLICATIONS ·Strobe flash applications ·Audio power amplifier app. |
| Features |
r-emitter breakdown voltage
IC=-10mA , IB=0 IC=-8A; IB=-0.4A IC=-8A ; VCE=-2V VCB=-50V;IE=0 VEB=-8V; IC=0 IC=-1A ; VCE=-2V IC=-8A ; VCE=-2V IE=0 ; VCB=-10V; f=1MHz IC=-1A ; VCE=-2V
-20
V
Collector-emitter saturation voltage
-0.5
V
Base-emitter on voltage
-1.5
V
Collector cut-off current
-. |
| Datasheet | 2SA1327 pdf datasheet |
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