AP9977GM Datasheet

AP9977GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

D2 D2 D1 D1 G2 S2 G1 S1 BVDSS RDS(ON) ID Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 S1 60V 100mΩ 3.3A D2 S2 Absolute Maximum Ratings Symbol Parameter V.

Features

e without notice 201108073-1/4 AP9977GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=3A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Gate-Source Leakage Total Gate Charge2 Gat.