RJP30H2A Datasheet

RJP30H2A Silicon N-Channel IGBT

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ  High speed switching: tf = .

Features

 Trench gate and thin wafer technology (G6H-II series)
 Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
 High speed switching: tf = 100 ns typ, tf = 180 ns typ
 Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) 4 C 1 23 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) E Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s,.