P2206BTF Datasheet

P2206BTF N-Channel MOSFET

P2206BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 22.5mΩ @VGS = 10V 28A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous.

Features

kdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 60 V 1.3 1.75 2.3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C 1 mA 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 10V, ID = 20A VGS = 4.5V, ID = 12A VDS = 5V, ID = 20A 18 22.5 mΩ 21 30 47 S DYNAMIC Input Capacitance Ciss 1040 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 133 pF Reverse Transfer Capacitance Crss 91 Gate Resistance Rg .