SiHH21N60E Datasheet

SiHH21N60E E Series Power MOSFET

www.vishay.com SiHH21N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 83 11 20 Single 0.153 PowerPAK® 8 x 8 4 1 2 3 3 Pin 4 G D Pin 1 Pin 2 Pin 3 S N-Channel MOSFET FEATUR.

Features

• Fully lead (Pb)-free device
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Kelvin connection for reduced gate noise
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial - Welding - Induction heating - Motor drives.