BULT118 Datasheet

BULT118 NPN Transistor

so rodThe device is manufactured using high voltage multi-epitaxial planar technology for high b Pswitching speeds and medium voltage capability. - O teIt uses a cellular emitter structure with planar ) leedge termination to enhance switching speeds t(s owhile maintaining the wide RBSOA. c bsThe dev.

Features

■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed t(s)Applications uc
■ Electronic ballast for fluorescent lighting rod
■ Flyback and forward single transistor low power P t(s)converters lete ucDescription so rodThe device is manufactured using high voltage multi-epitaxial planar technology for high b Pswitching speeds and medium voltage capability. - O teIt uses a cellular emitter structure with planar ) leedge termination to enhance switching speeds t(s owhile maintaining the wide RBSOA. c bsThe device is designed for use in lighting u .