XR-2011 Datasheet

XR-2011 High-Current Darlington Transistor Arrays

The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic substrate. All units feature open collector outputs and integral protection diodes for driving inductive loads. Peak inrush currents of up to .

Features

Peak Inrush Current Capability of 750 mA Internal Protection Diodes for Driving Inductive Loads Excellent Noise Immunity Direct Compatibility with Most Logic Families Opposing Pin Configuration Eases Circuit Soard Layout APPLICATIONS Rela.